μ PA2211T1M
-1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-0.8
10
T ch = ? 25 ° C
25 ° C
-0.6
1
-0.4
-0.2
0
V DS = ? 10 V
I D = ? 1 mA
0.1
0.01
75 ° C
125 ° C
V DS = ? 10 V
Pulsed
-50 -25
0
25
50
75 100 125 150 175
-0.001
-0.01
-0.1
-1
-10
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
80
60
Pulsed
80
60
I D = ? 7.5 A
Pulsed
40
20
0
V GS = ? 1.8 V
? 2.5 V
? 4.5 V
40
20
0
-0.1
-1
-10
-100
0
-2
-4
-6
-8
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
V GS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
60
50
40
? 2.5 V
V GS = ? 1.8 V
10000
30
20
? 4.5 V
1000
C iss
10
0
I D = ? 3.8 A
Pulsed
100
V GS = 0 V
f = 1 MHz
C oss
C rss
-50 -25
0
25
50
75 100 125 150 175
-0.1
-1
-10
-100
4
T ch - Channel Temperature - ° C
Data Sheet G19452EJ1V0DS
V DS - Drain to Source Voltage - V
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